Abstract
The regional transit time analysis technique is extended from 1-D to 3-D and used to investigate the AC performance of a SiGe HBT-on-SOI fabricated with a novel contact layout. As confirmed by TCAD simulations, the relocation of the base contacts out-of-plane with respect to the emitter and the collector results in a true 3-D current flow. Consequently, AC analysis and optimization cannot be performed with conventional 1-D regional transit time analysis.
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