3-D position sensitive CdZnTe spectrometer performance using third generation VAS/TAT readout electronics

Abstract

Three-dimensional (3-D) position-sensitive CdZnTe (CZT) gamma-ray spectrometers employing new VAS3.1/TAT3 ASIC readouts were developed and tested. Each spectrometer is a 1.5 /spl times/ 1.5 /spl times/ 1 cm/sup 3/ CdZnTe crystal with 11 /spl times/ 11 pixellated anodes wire-bonded to the readout electronics using an intermediate ceramic substrate with plated-through-via. The signals from the anode pixels and the cathode were all read out using these ASICs. The pixel position provides the lateral coordinates of interactions, while the cathode to anode signal ratio and electron drift times are used to obtain interaction depths. Using the 3-D position information, the variation in weighting potential, electron trapping and material nonuniformity can be accounted for to the scale of the position resolution, /spl sim/1.27 /spl times/ 1.27 /spl times/ 0.2 mm. The new VAS3.1/TAT3 ASIC has less gain and baseline drift, lower cross-talk noise, more uniform thresholds, better linearity and better timing resolution than our previous VAS2/TAT2 system. For example, the 32 keV K X-ray from a /sup 137/Cs source was observed for the first time. Two 3-D position sensitive CZT spectrometers were tested and both achieved better than 1% FWHM energy resolution (at 662 keV, room temperature operation, with an uncollimated source) for single-pixel events. The experimental results for these two 3-D position sensitive CZT spectrometer systems are presented and discussed.