Abstract
A full band, three-dimensional, Monte Carlo simulator for deep sub-micron Si MOSFET like devices has been developed, with the goal to obtain optimal performance on a parallel system built from a cluster of commodity computers. A short-range carrier-carrier and carrier-ion model has been implemented within this framework, using Particle-Particle Particle-Mesh (P3M) algorithm. Test simulations include the 90 nm “well-tempered MOSFET” for which measurements are available. Simulation benchmarks have identified several factors limiting the overall performance of the code and suggestions for improvements in these areas are made.
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