Abstract
In-situ annealing tests of Cu/Ni/Au/Sn-Ag/Cu micro-bump for 3D IC package were performed in an scanning electron microscope chamber at in order to investigate the growth kinetics of intermetallic compound (IMC). The IMC growth behaviors of both and follow linear relationship with the square root of the annealing time, which could be understood by the dominant diffusion mechanism. Two IMC phases with slightly different compositions, that is, and formed at Cu/solder interface after bonding and grew with increased annealing time. By the way, and phases formed at the interfaces between and Ni/Sn, respectively, and both grew with increased annealing time. The activation energies for and IMC growths during annealing were 0.69 and 0.84 eV, respectively, where Ni layer seems to serve as diffusion barrier for extensive Cu-Sn IMC formation which is expected to contribute to the improvement of electrical reliability of micro-bump.
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