高純度3.3%Si鋼での二次再結晶発現

Abstract

Possibility of the occurrence of secondary recrystallization in high purity material without containing inhibitor elements was investigated experimentally. Only in the sample with primary recrystallization annealing performed at 900°C, onset of secondary recrystallization was observed. The orientation of secondary recrystallized grains proved to be {110} <001> (Goss) orientation. It was also shown that normal grain growth was suppressed in the sample in which secondary recrystallization occurred. Narrow grain size distribution and strong texture accumulation were considered to help the stabilization of the matrix grains. Texture development during secondary recrystallization in the absence of inhibitors was discussed based on proposed growth models. It was shown from Grain Boundary Character Distribution (GBCD) analysis that the High Energy (HE) boundary model was applicable to secondary recrystallization and the Solid State Wetting (SSW) model was applicable to normal grain growth. The HE boundary was related theoretically to high mobility through high grain boundary diffusion coefficient. It was considered that reducing impurity elements exerted inherent high mobility of the HE boundary and hence led to the onset of the secondary recrystallization.