3–10 GHz, 6.54‐mW CMOS ultrawideband low‐noise amplifier using a hybrid structure

Abstract

ABSTRACTA low‐noise amplifier (LNA) for 3–10 GHz ultrawideband applications is realized in 65‐nm CMOS technology. A self‐biased resistive feedback structure with inductive peaking topology is used to achieve wideband matching as well as flat gain, and the current reuse technique is used to reduce power consumption. Furthermore, a series source negative feedback resistor is introduced to achieve a significant input matching improvement for the purpose of saving chip area. The LNA exhibits 13.2‐dB power gain, 4.38‐dB minimum noise figure, and 6.54‐mW power consumption under a 1.2‐V supply voltage. Moreover, only two inductors are used in the circuit, occupying a silicon area of 0.072 mm2. It is able to achieve functionality with a small silicon area and a low‐power consumption among recently published CMOS‐based wideband LNAs. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:293–295, 2016