2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction

G Hu,J J Nowak,C Safranski,J Kim,E Galligan,M G Gottwald,E R J Edwards,J Z Sun,H Jung,L Buzi,S L Brown,C P D'Emic,G Lauer,P L Trouilloud,D C Worledge,O Gunawan,P Hashemi,K Latzko,S Zare

doi:10.1109/iedm19574.2021.9720691

2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction

G Hu, J J Nowak + Show 17 more

https://doi.org/10.1109/iedm19574.2021.9720691

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Publication Date: Dec 11, 2021

Citations: 20

Affiliation: IBM (United States)

#Double Magnetic Tunnel Junctions #Torque Magnetoresistive Random Access Memory + Show 8 more

Abstract
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Abstract

We introduce a new device for reducing the switching current, Ic, in Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM). The Double Spin-torque Magnetic Tunnel Junction (DS-MTJ) uses spin torque from both top and bottom free-layer interfaces to reduce Ic by 2x. However, unlike previous work using Double Magnetic Tunnel Junctions (DMTJs), the DS-MTJ does not suffer from reduced magneto resistance (MR) due to increased series resistance. Experimental data using 10 ns write pulses demonstrates 2x reduction in Ic, and reliable writing down to an error-floor of write-error-rate (WER) = 1e-6.

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