Abstract
A two dimensional variation of the properties of the gas sensitive layer of a metal-insulator-semiconductor (MIS) structure has been analysed with the Scanning Light Pulse Technique (SLPT). This technique allows a lateral resolution of the local gas response for such a device. The results indicate that this method can be used in order to choose an appropriate thickness combination of the metal films for a double layer component so that the sensor properties can be optimised. Furthermore, the results indicate that optimal properties of the gas sensitive layer differ from one gas to another. This is exemplified with hydrogen and ethanol.
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