Abstract
A new time-domain two-dimensional (2D) electromagnetic (EM) physical modelling of non-linear distributed semiconductor devices has been developed. It is based on a numerical procedure which solves in a self consistent manner both Maxwell’s equations and a macroscopic transport model based on the drift-diffusion approximation. The software can be run on a parallel computer. It is based on finite-difference time-domain (FDTD) explicit schemes associated to the domain decomposition method. The millimetre-wave travelling-wave IMPATT diode or Distributed IMPact ionisation and Avalanche and Transit Time (DIMPATT) diode is the non linear test structure chosen to validate the model. RF simulations under amplification and CW oscillation operating modes have been performed. The results presented in this paper consist on the one hand of results that can be qualitatively compared to previously published theoretical works and on the other hand of features especially pointed out thanks to the new electromagnetic physical model capabilities.
Published Version
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