Abstract
We follow the trajectory of the out-of-equilibrium electron population in low-bandgap semiconductor InSb, using reflective cross-polarized 2D THz time-domain spectroscopy. The 2D THz spectra show a set of distinct features at combinations of the plasma edge and vibration frequencies. We assign these features to electronic nonlinearities, using finite difference time domain simulations, and show that the nonlinear response in the first picoseconds is dominated by coherent ballistic motion of the electrons. We demonstrate that this technique can be used to investigate the landscape of the band curvature near the Γ-point such as anisotropic characteristics in the (100)-plane.
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