Abstract
In this study, the atomic-scale roughness and uniformity of SiO2 thermally grown on atomically flat Si surface are investigated. The SiO2 surface roughness increases with increasing oxide thickness in the initial rapid oxidation region in the Deal-Grove model. This roughness growth can be related to re-oxidation of SiO emitted from the Si/SiO2 interface near the SiO2 surface. On the other hand, the roughness growth is saturated in the linear rate oxidation region. It is explained that the emitted SiOs within the SiO2 are re-oxidized and the generated oxidation stress is absorbed within the film.
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