Abstract
In this paper, a novel device structure (Si1 − x Ge x /Si/Si1 − x Ge x hetero-structure), which is named as “center-channel (CC) double-gate (DG) MOSFET,” is proposed. Device performance of the proposed FET structure was investigated with our two-dimensional quantum-mechanical simulator which produces a self-consistent solution of Poisson–Schrödinger equations and the current continuity equation. The CC operation of CC-NMOS is confirmed from the electron density distribution and the band lineups as well as the lowest energy wave function. Current–voltage characteristics including the trans-conductance (G m) of CC-MOSFET are carefully compared with those of the conventional DG-NMOS to evaluate the distinct feature of the proposed FET structure. Our simulation revealed that the proposed FET demonstrates the enhanced (about (∼1.6 × ) current drive and 60% G m. Finally, the short-channel effects of CC and DG MOSFET, both of which demonstrate excellent sub-threshold behaviors and open the possibility of device scaling down to sub-20 nm.
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