Abstract
Device modeling for p–i–n junction μc-Si basis thin film polycrystalline Si solar cells has been examined with a simple model of columnar grain structure and its boundary condition utilizing two-dimensional device simulator. As the simulation results of solar cell characteristics show, open-circuit voltage ( V oc) and curve fill factor (FF) considerably depend on those structural parameters, while short-circuit current density ( J sc) is comparatively stable by courtesy of homogeneous built-in electric field in the i layer. It has also been found that conversion efficiency over 12% could be expected with 1 μm grain size and well-passivated condition with 3 μm thick i-layer.
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