Abstract
MoWSe 2 has emerged as a special member in the family of two-dimensional transition metal dichalcogenide semiconductors. Mono-layer MoWSe 2 MOS device was fabricated by mechanical exfoliation on SiO 2 /Si substrate. We have observed strong and highly layer dependent photoluminescence in mono- and few-layer MoWSe 2 (one to four layers). Our results provide much needed experimental information about the properties in MoWSe 2 Material.
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