Abstract
In this work, we use a two-terminal 2D MoS2-based memristive device to emulate an artificial neuron. The Au/MoS2/Ag device exhibits volatile resistance switching characteristics with a low threshold voltage and a high ON-OFF ratio of 106, originating from an Ag diffusion-based filamentary process. The leaky integrate-and-fire neuron implemented with this device successfully emulates the key characteristics of a biological neuron.
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