Abstract
Two-dimensional (2D) modeling is reported for InGaP/GaAs/InGaAs four-junction solar cell with tunnel junctions. The cell basic physical properties were demonstrated. The simulated results indicate one-sun efficiency about 40.1% with short-circuit current density as 126.63 A/m2 and open-circuit voltage as 3.69V. High efficiency up to 45.9% under 100 sun illumination could be achieved.
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