Abstract
New materials, devices and computing architectures are being actively pursued to sustain continued logic and memory function scaling [1]. One such device is resistive random-access memory (RRAM), which are two-terminal elements with an inherent memory effect driven by internal ion distributions within a solid-state switching medium [2]. As a memory device, RRAM is currently being commercialized for embedded memory and stand-alone data storage applications. More over, RRAM crossbar networks are also widely considered as a promising candidate for future neuromorphic hardware systems due to their ability to simultaneously store weights and process information at the same physical locations [3].
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
