2D g-C3N4/GaN nanorods device for UV photodetector and NO2 gas sensor at room temperature

Abstract

In this work, we improved charge carrier separation efficiency through a g-C3N4/GaN NRs heterostructure device. We characterized the properties of the g-C3N4/GaN NRs device with detecting the UV light and sensing NO2 gas at room temperature. The device showed high responsivity and detectivity under zero bias conditions due to the built-in field at the interface of the heterostructure. The performance of the heterostructure was stimulated under UV light illuminations with 2.3 times higher response compared to the darkness. In addition, the device response to NO2, NH3, H2, H2S and CO ambient gases at RT were measured, the device exhibited high response to NO2 gas. The low activation energy promoted to capture NO2 gas molecules.