Abstract
Photodetectors (PDs) based on single-walled carbon nanotube film/silicon and graphene/silicon heterojunctions have been realized for fast applications. We investigated the response of the PDs to femtosecond pulsed laser using a three-electrode configuration for photoconductive operations. Both junction PDs exhibit rise times of some nanoseconds, detecting light from ultraviolet (275[Formula: see text]nm) to infrared (1150[Formula: see text]nm). Applying a gate voltage [Formula: see text], the rise time decreases down to about 1[Formula: see text]ns, making our devices comparable to most commercial PDs.
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