2D/2D MoS2/g-C3N4 layered heterojunctions with enhanced interfacial electron coupling effect

Abstract

• 2D/2D MoS 2 /g-C 3 N 4 heterostructures were created via MoS 2 growth in situ. • The heterostructures exhibited enhanced photo- and electro-chemical activities. • The face-to-face contact between MoS 2 and g-C 3 N 4 enhanced interfacial electron coupling. • Broad optical response range and decreased recombination rate of photogenerated carriers improve their performance. 1 T-2H MoS 2 were successfully grown on g-C 3 N 4 nanosheets by convenient two-step calcination and solvothermal process to create two dimensional (2D)/2D heterostructures. 1 T-2H MoS 2 was parallelly grew on g-C 3 N 4 nanosheets to form a stable interfacial heterojunction. Various characteristics confirm the formation of parallel 1 T-2H MoS 2 /g-C 3 N 4 heterostructures. The heterostructures exhibited enhanced photo- and electro-chemical activities. The photocatalytic degradation of dyes and electrochemical performance characterization indicates sample 2.5%MCN with MoS 2 of 2.5 wt% shows excellent photocatalytic activity, in which the degradation rate for rhodamine B (RhB) is 1.84 times compared with pure g-C 3 N 4 nanosheets. Because the face-to-face contact between 1 T and 2H MoS 2 and g-C 3 N 4 forms strong interfacial electron coupling, the optical response range became broad, the photocurrent density increased, and the recombination rate of photogenerated electron and hole decreased. In addition, the formation of 1 T-2H MoS 2 /g-C 3 N 4 parallel heterojunctions and photocatalytic degradation process are studied in detail. The result supplied an efficient approach for the exploration of g-C 3 N 4 based photocatalyst.