Abstract
We present the successful operation of Nb/Nb oxide-based single-electron transistors at room temperature. At first, devices were fabricated by scanning probe microscope based anodic oxidation technique. Then, the effective area of tunnel junctions was further shrunken by thermal oxidation. Ultrasmall tunnel junctions were easily obtained utilizing additional thermal oxidation process, and single-electron charging effects were observed by means of the modulation of Coulomb blockade voltages at room temperature.
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