Abstract
In this paper, the gallium nitride (GaN) based Micro‐LED was fabricated based on a self‐aligned process with hydroxide treatment and ALD passivation from 100 μm down to 3 μm. The different current spreading performance was characterized based on the series resistance analysis. Then the size‐dependent carrier concentration profile was demonstrated via the capacitancevoltage measurement, identifying the various carrier injection behavior by different size. Finally, the external quantum efficiency and luminance versus current density dependence for array device and the single device was compared, revealing a higher efficiency at lower current density for array device, which is favorable for display application.
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