Abstract
In this study, we explored the electrical characteristics of micro‐LEDs with various pixel sizes on GaN substrates, demonstrating that small sizes have high current density due to superior current spreading. Due to the p‐electrode ohmic contact's temperature dependence, which is supported by TLM measurements, the ideal factor declines as temperature rises. We also show the temperature sensitivity in proportion to device size at a certain current density, which is susceptible to carrier non‐radiative recombination brought on by surface defects. We comprehensively present the thermal properties of GaN‐on‐GaN homoepitaxy micro‐LEDs, laying the groundwork for improved device stability and reliability.
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