29.2: Silicon Ink‐Based Poly Si CMOS TFT Fabricated on 300mm Stainless Steel Foil Substrates

Abstract

Laser crystallized CMOS TFTs were fabricated on thin 300 mm stainless steel substrates using novel coated silicon in a Printed Dopant PolySilicon (PDPS) process‐flow [1]. Silicon ink will be a key building block for low‐cost, continuous large‐area coating or printing in very high‐volume roll‐to‐roll manufacturing. RF devices with PECVD‐equivalent TFT characteristics using semiconductor‐grade inks are routinely fabricated using this process. This technology is foundational to low‐cost, high‐volume, RF (13.56MHz), display and integrated sensor system circuits on thin, large‐area flexible and durable substrates.