Abstract
AbstractZnO/Si and ZnO/GaAs based n‐n isotope heterojunction light emitting diodes (LEDs) are reported. Undoped ZnO thin films were deposited on n+‐Si and n+‐GaAs wafers by a low cost ultrasonic spray pyrolysis technique. The as‐grown ZnO thin films show polycrystalline structure with good photoluminescence properties. Both ZnO/n+‐Si and ZnO/n+ ‐GaAs LEDs show distinct visible electroluminescence at room temperature when a negative voltage is applied on the ZnO side. The electroluminescence intensity of the ZnO/n+‐Si(GaAs) heterojunction is higher than the ZnO/p+‐Si(GaAs)heterojunction.
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