Abstract
This study presents a Ka-band direct-conversion receiver using a 28-nm CMOS (Complimentary Metal Oxide Semiconductor) process for radar applications. The designed receiver includes a LNA (Low-Noise Amplifier), Mixer, and Baseband amplifier. The LNA adopts a two-stage cascode amplifier structure. Then, the mixer is a single-balanced passive mixer with low flicker noise. At the end, the baseband amplifier is a transimpedance amplifier with fat FET (Field-Effect-transistor) for low flicker noise and current-mode operation of the mixer. The LO (Local Oscillator) signal for driving the mixer is supplied externally. The performance of the receiver is tested using on-wafer probing and an air test is performed by integrating a microstrip antenna. The total conversion gain, noise figure, and 3 dB bandwidth are 28 dB, 6.1 dB, and 6 GHz, respectively. The chip size is 0.320 mm2.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: The Journal of Korean Institute of Electromagnetic Engineering and Science
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
