Abstract
Presented is a monolithic microwave integrated circuit (MMIC) resonant tunnelling diode (RTD) oscillator that employs two In0.53Ga0.47As/AlAs RTDs (5 × 5 µm2) in parallel. The oscillator works at 28.7 GHz with −0.7 dBm output power. The phase noise was −95 dBc/Hz at 100 kHz and −114 dBc/Hz at 1 MHz offset. This reported work demonstrates the potential of RTD oscillators in achieving high output power at high frequencies by utilising suitable power maximising and combining techniques.
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