Abstract
In inverted quantum‐dot light‐emitting‐diodes (QD‐LED), it is important to use orthogonal solvent for hole‐transport layer(HTL). In addition, modulating work function of each layer is good way to enhance carrier injection barrier. In this research, we confirmed the viability of usage of a solvent, named gamma‐valerolactone (GVL) for forming hole transport layer (HTL). By using the solvent, current density, luminance, roll‐off characteristics were enhanced, and highest occupied molecular orbital (HOMO) level was changed, which can enhance the hole injection.
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