Abstract

The charge accumulation within organic light‐emitting diodes (OLEDs) is a critical factor affecting their performance. Particularly, the accumulated surface charge density (σacc) below the threshold voltage is determined by the polarization charge, which is induced by the spontaneous orientation of polar molecules, such as tris(8‐hydroxyquinolinato) aluminum and 1,3,5‐tris(1‐phenyl‐1H‐benzimidazol‐2‐yl) benzene (TPBi). Recently, the σacc in a TPBi‐based bilayer device was reported to be increased by light irradiation during TPBi deposition [Trans Electron. E104‐C, 176 (2021)]. However, the effect of irradiation on device performance remained unclear. In this study, we found that light irradiation enhances not only σacc but also the current efficiency of the device. This result suggests that the application of light irradiation is a useful process for realizing high‐performance OLEDs.

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