Abstract
The carrier dynamics in quantum dot light‐emitting diodes (QLEDs) significantly deviate from that in traditional organic and inorganic light‐emitting diodes. This study elucidates the charge injection and recombination processes in QLEDs using impedance spectroscopy. Parameters derived from the equivalent circuit model, in conjunction with the applied device voltage, elucidate the nuanced changes in carrier behavior during operation. This methodology serves as a potent tool and novel approach for comprehending and analyzing the physics of QLED devices.
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