Abstract

We have performed 27Al-NQR measurements in CeOs2Al10 which exhibits a novel phase transition at T0=29 K The NQR parameters determined for all the Al sites in ambient pressure were compared with those in CeRu2Al10 with T0=27 K and CeFe2Al10 with no phase transition. The distinct NQR splitting just below T0=32.5 K under pressure 0.66 GPa ensures an enhancement of T0 and a homogeneous transition. Despite the increase of T0, the nuclear spin-lattice relaxation rate 1/Tl is suppressed over whole range of temperature than in ambient pressure. The characteristic features of no critical slowing down at T0 and of the remarkable decrease of 1/T1T starting at T > T0 become prominent under pressure, suggesting an approach to Kondo semiconductor in a valence fluctuation regime.

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