Abstract
We report the design, fabrication, and characterization of an ultrasensitive resonant (~300–400 Hz) magnetometer with 0.67-mV/nT sensitivity. The sensor was composed of a low stress (−14 MPa) low-pressure chemical vapor deposition silicon nitride cross bridge and a neodymium magnet. External magnetic field biasing (to modify the effective Hooke’s constant), shielding, mechanical isolation, and parametric amplification and feedback were used to progressively improve the sensor performance from 1 $\mu \text{T}$ minimum detectable signal to 27 pT; an improvement of five orders of magnitude. The sensor’s average temperature sensitivity around the room temperature was 11.9 pV/pT/°C.
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