Abstract
In0.87Ga0.13As/InAs0.70P0.30 double heterostructure light emitting diodes were grown on InP substrates using strain relaxed buffers by molecular beam epitaxy. The InAsP buffer incorporates a compositional step-back to reduce the threading dislocation density in the active region. Efficient electroluminescence at 2.7 µm was obtained at room temperature. A strong absorption is observed in the emission spectrum due to the presence of water vapour.
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