Abstract
AbstractA novel LTPS method called MICC (metal‐induced crystallization using a cap) is introduced. The role of cap layer on a‐Si is the control of the nickel concentration for inducing crystallization as well as the passivation of the surface during thermal process for crystallization. Circular grain growth can be seen, due to lateral grain growth from a seed. Polycrystalline silicon with large grain and smooth surface can be achieved by MICC. We fabricated a AMLCD with high aperture ratio of 80 % using silicon‐based spin‐on low‐K dielectrics as a planarization layer.
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