Abstract
AbstractMgO films deposited on Si (111) and Al2O3 (0006) substrate have only (111) diffraction independent of film thickness while those on Si (100) substrate have preferred orientation change from (200) to (111) as film thickened due to the highest adatom mobility of (200) plane. By using ion beam assisted deposition, the crystal structure of MgO could be controlled via adjusting adatom mobility.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
