Abstract
Organic‐inorganic hybrid perovskite is a highly light sensitive photodetector material(1), which has competitive advantages of low cost, wide and adjustable light absorption range. However, due to its solubility in polar solvent, its fabrication is not compatible with conventional photolithography process, which limits its application as pixel element in high‐resolution image sensors. Therefore, the patterning of perovskite turns out to be a key issue for practical application of perovskite photodetectors in the field of image sensor(2). In this study, we report a Ruddlesden‐Popper (RP) quasi‐two‐dimensional (quasi‐2D) perovskite ‐ indium gallium zinc oxide (IGZO) phototransistor, and their patterning techniques. A patterned quasi‐2D perovskite layer is deposited on the channel region of IGZO thin film transistor (TFT), which enables ultralow off‐state dark currents of 10−11 A and a high responsivity of 103.5 A/W under 400 nm light illumination with tunable photoconductive gain.
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