Abstract
Gallium arsenide (GaAs) transit-time diodes with tunnel injection of electrons (TUNNETT) with transit-time layer thickness of 100 and 150 nm were fabricated with molecular layer epitaxy (MLE). Continuous-wave fundamental-mode oscillation in the frequency range of 240 to 325 GHz in metal rectangular resonant 0.86 /spl times/ 0.43 mm size (WR-3) cavities was obtained. Output power of -13 dBm was generated at 322 GHz. The fundamental mode operation, as well as experiments on different impedance matching configurations, suggest that it is possible to develop fundamental mode TUNNETT generators for the frequency range of 350 GHz to 1 THz. Operation of the TUNNETTs confirms device quality of the MLE.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
