Abstract
A 24 Gbit/s demultiplexer IC is presented using oxide planarised double mesa Si/SiGe heterojunction bipolar transistors (HBTs). Taking into account an emitter width of 1.5 µm and a high base–collector capacitance due to the large base–collector mesa width of 4.5 µm, this is a very satisfactory result and to the knowledge of the authors is the highest bit rate reported for Si/SiGe circuits.
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