24.2: Single Layer Al‐Ni‐La‐Si Interconnections for Source and Drain of LTPS‐TFT LCDs Using Direct Contacts with both ITO and poly‐Si

Abstract

AbstractIt was demonstrated for the first time that the use of Al‐Ni‐La‐Si alloy films for the direct contacts of interconnection lines with both ITO and poly‐Si was feasible for the LTPS‐TFTs. Measured contact resistivity was in the order of 10−4 Ω.cm2 for ITO and Al‐0.6 at.% Ni‐0.1 at.% La‐0.5 at.% Si. The Al alloy films patterned on poly‐Si were found to be stable below 350 °C. It was also found that Al alloy has good dry etching characteristics such as a high etching rate and good selectivity to photo‐resist, suitable for high‐resolution LTPS‐TFT LCDs.