Abstract
IGZO TFT with the same on current as n‐LTPS was fabricated. The saturation on current reached 1 mA, and the off‐state leakage current was below 1 pA. The Vth shift under PBT / NBT stress test for the IGZO TFT was 0.1 / −0.1 V, respectively, which was better compared to the n‐LTPS. Furthermore, the IGZO TFT showed an ideal Id‐Vd curve (output characteristics) without any kinks. These results indicate that, a variety of backplanes, from small size smartphones to large area TVs, are possible to be made in a single factory of IGZO.
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