−23.5dBm senstivity, 900MHz differential-drive rectifier

Abstract

This paper presents a modified differential-drive rectifier to improve the power conversion efficiency (PCE) and the sensitivity of rectifier for the use of energy harvesting applications. This is achieved by utilizing DTMOS connected transistor and applying decoupling capacitor between the cross-connected drain-and-gate transistors at the rectifier. The implementation of the DTMOS transistor enables the threshold voltage of transistor to be controlled dynamically. Decoupling capacitor at both of the cross-connected gate and voltage boosting circuit at each of the rectifier input increases the transistor operating voltage thus increase the rectifier sensitivity. An 80.6% PCE is obtained by the proposed design at input power, Pin = −23.5dBm. The proposed design enables the rectifier operates in less than 3 times input RF power compared to conventional DTMOS DDR.