Abstract
We present a new pixel structure to realize the 1μm‐pixel‐pitch display. This structure is based on the conventional back‐channel etched thin‐film transistor (TFT), but all layers except the horizontal gate line are vertically stacked on the embedded data line, enabling the implementation of high resolution display panels. The vertically‐stacked TFT with 1μm‐channel length shows a high field effect mobility over 50 cm2/Vs, low subthreshold slope of 78 mV/decade. It also shows a high uniform electrical characteristic over the entire 6‐inch wafer. The development of new architecture enables the implementation of a 1μm‐pixel‐pitch high resolution displays such as digital hologram.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
