Abstract
AbstractHere, we report a general route to form high‐performance and stable solution‐processed metal‐oxide TFTs and circuits at room‐temperature by deep‐ultraviolet (DUV) photochemical activation The photo‐enhanced DUV annealing induces condensation and densification of amorphous metal‐oxide semiconductor films via photochemical reactions and film microstructure modifications by energetic photons. It was found that the photochemical annealing is effective in fabricating most metal‐oxide semiconductors and the metal‐oxide TFTs typically demonstrate comparable or even better electrical performance and operational stability with high‐temperature (≥350C) annealed devices. The room‐temperature fabricated metal‐oxide TFTs and circuits have shown field‐effect mobilities of more than 14 and 7 cm2 V−1 s−1 on glass and polymeric substrates, respectively. The fabricated 7‐stage ring oscillators on polymeric substrates indicate oscillation frequency of > 340 kHz corresponding to propagation delay of < 210 ns per stage.
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