Abstract
AbstractWe developed an active‐matrix liquid‐crystal display on the plastic substrate using hydrogenated amorphous silicon thin film transistor (a‐Si:H TFT). TaOx film on both side of substrate was deposited in order to reduce gas permeation to plastic substrate and protect it from chemical attack during TFT process. The substrate bending caused by the thermal stress could be released with the island patterning of the inorganic layers. A prototype 2″ TFT‐LCD was demonstrated with a maximum process temperature of 150 °C.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
