Abstract
This study aims to clarify the interaction between Si wafer and individual abrasive grains in an atomic level. This paper reports on the proposal of the molecular dynamics simulation in Si wafer grinding/polishing with the control of the interatomic potential parameters to consider the mechano-chemical and adhesion effects between an abrasive and a Si wafer. From the simulation results, the availability in proposed model was verified, because exactly same as the real grinding processes, it was confirmed that the assistance of chemical effect and reduction in adhesion are effective for the reduction in subsurface damages, grinding forces and tool wear, but accompanies with the reduction in material removal rate.
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