Abstract
Oxide-based heterojunctions have attracted much attention due to their multifunctional device-oriented applications. Researchers are trying to improve the performance of heterojunction in terms of different combinations during synthesis as well as employing postdeposition modification techniques like thermal annealing and ion irradiation. In recent years, swift heavy ion (SHI) irradiation has been considered as one of the excellent tools for engineering the characteristics of materials. We, therefore, focus our attention to present a brief review of the diode characteristics and resistive switching characteristics of oxide-based heterojunctions upon SHI irradiation. Most of the studies revealed that the SHI irradiation led to the improvement in the device characteristics of heterojunction due to different manifestations like atomic diffusion across the interface, interface defect engineering, generation of compressive as well as tensile stress, oxygen vacancies, etc.
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