Abstract
We report complementary metal‐oxide semiconductor (CMOS)‐compatible, negative capacitance (NC) ferroelectric (FE) zirconium‐aluminum oxide (ZAO)/ZnO thin‐film transistors (TFTs) at a low thermal budget of 360 °C. The NC‐FE‐TFTs demonstrate uniform device‐to‐device performances, featuring a high memory window of 6.7 ± 0.1 V and steep subthreshold swing of 43 ± 4 mV dec–1 . The observation of negative differential resistance at room temperature confirms the NC effect in FE‐ZAO/ZnO TFTs. In addition, a learning accuracy of ≈92% is achieved, highlighting the potential for high precision neuromorphic computing application.
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