Abstract
In order to investigate the effect of strain on p-type antimony telluride (Sb-Te) and bismuth telluride (Bi-Te) thin films, we applied various compressive and tensile strains to the thin films by changing the bending radius of a flexible substrate, wherein the strain ranged from -0.3% (compressive) to +0.3% (tensile). We analyzed the structural properties by XRD, and measured the thermoelectric properties at room temperature. It was found that the thermoelectric properties of p-type Sb-Te thin films were influenced by induced strains more than that of the n-type Bi-Te thin films. As a result, the power factor of p-type Sb-Te thin films at the strain of -0.15% (compressive strain) reached 10 μW/cm/K^2.
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