Abstract
This paper reports an electroplating method with supercritical carbon dioxide (sc-C02) emulsion, denoted as "Supercritical Nano Plating (SNP)" on hole test element group (TEG), which has an integrated structure of Cu seed layer on TiN barrier layer sputtered on Si substrates. The reaction is carried out in an emulsion of sc-C0_2 in copper-sulfate-based electrolyte with surfactants. It was reported that Ni film obtained by SNP is uniform and without pinhole, because sc-C0_2 has low viscosity and compatibility of hydrogen. Thus, this method is applicable in fine Cu wiring, but dissolution of Cu seed layer in SNP was observed Therefore, Cu particle was added to form a suspension An electroplating method with sc-C0_2 suspension, denoted as Modified SNP (M-SNP) is proposed to inhibit dissolution of Cu seed layer. We applied M-SNP technique into filling of hole TEG with via having 70 nm in diameter and 350 nm in depth, and complete filling of all the holes with electrodeposited copper without any void was obtained while poor gap-filling with voids was observed in conventional plating method. The electrodeposited Cu filled into holes formed a single crystal or had a few twin boundaries parallel to the surface of TEG.
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