Abstract
AbstractSince the first demonstration of oxide TFT driving AM‐OLED, oxide TFT technology has attracted explosive interesting and has been developed for the mass production. The performance of oxide TFT has been verified and the remained issue is bias temperature stability. In this paper, we report the effect of interface process including channel and back channel on the oxide TFT performance in a top gate and a bottom gate structure. We also demonstrate transparent AM‐OLED driven by highly stable Al doped ZTO TFT.
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